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                      | HITACHI HOME | UP | SEARCH | HITACHI

                      News Release

                      December 16, 1996

                      Hitachi Releases 64-Mbit Synchronous DRAMs Operating at 100 MHz and 128-Mbyte Synchronous DRAM Modules

                      - Large-capacity memories provide high speed, efficient data transfer -

                      Hitachi, Ltd. has developed these series of 64-Mbit synchronous DRAMs that operate at 100MHz operation and provide a high data transfer speed of 200 Mbytes per second in x 16-bit configuration, for main memory and high-speed image processing applications in workstations and personal computers. In Japan, sample shipments of the HM5264405 ( 16M x 4) will begin in January 1997, and will be followed by the HM5264805( 8M x 8) in April and the HM5264165 ( 4M x 16) in June.

                      Hitachi has also developed and is releasing the 7 series of 64-Mbit SDRAM modules. The HB526C1672EN, HB526C1664EN and HB526C864EN 168-pin unbuffered Dual Inline Memory Module (DIMM), and the HB526C1672E and HB526C872E 168-pin buffered DIMMs are for desktop PCs, and the 144-pin Small Outline (SO) HB526A864DB and HB526A464DB DIMMs are for notebook PCs. Sample shipments of these memory modules will begin from second quarter of 1997 in Japan.

                      The increasingly high performance of workstations and personal computers has been paralleled by an increase in system clock frequencies. And in the field of video memory, data transfer speeds have risen in line with higher display resolutions and advances in high-speed image processing technologies such as MPEG2*. At the same time, high-speed applications require a large main memory capacity.

                      Synchronous DRAM meets these needs by performing input/output operations in synchronization with a clock signal, and the ease with which high-speed operation can be achieved in synchronization with the system clock has led to a rapid increase in the use of this kind of memory. Hitachi already has 4- and 16-Mbit synchronous DRAMs in volume production, which are used as video memory in products such as game machines, personal computers and Hi-Vision TVs, and also as main memory in mainframe computers and workstations.

                      To meet the demand for faster and larger memories for PCs and for MPEG2 and other high-speed image processing applications, Hitachi developed the HM5264405/805/165 series of 64-Mbit synchronous DRAMs. Use of the latest 0.3-micron CMOS process technology and 3-stage pipelining enables the HM5264405/805/165 series to achieve the large capacity of 64 Mbits and high-speed operation synchronized with a 100 MHz clock. The new memories have a 4-bank configuration. Support for a 6-bit configuration has enabled the data transfer speed to be increased to a maximum of 200 Mbytes per second, making these synchronous DRAMs suitable for MPEG2 and similar image processing applications in which large volumes of data are processed at high speed. The new memories are mounted in 54-pin 400 mil TSOP-II packages and conform to JEDEC (Joint Electron Device Engineering Council) standard specifications.

                      Future plans to meet constantly evolving market needs include the development of SOJ and other package versions, and 125 MHz-plus ultra-high-speed versions featuring 4-stage pipelining and small-amplitude interface (SSTL 3) support, as well as research into the development of 256-Mbit capacity and use of a x 32 bit configuration and an 8-bank configuration.

                      [Note]

                      MPEG2 (Moving Picture Experts Group Phase 2): An international standard for moving picture compression and expansion technology.

                      [Applications]

                      1. 64-Mbit SDRAMs
                      Mainframe computers, workstations, personal computers

                      2. SDRAM Modules
                      168-pin DIMM : workstations, personal computers
                      144-pin SO DIMM: notebook PCs

                      [Sample Pricing in Japan]

                      - 64-Mbit SDRAMs
                      ProductBit configurationSample price
                      (yen)
                      HM5264405TT16Mx4x4Bank16,000
                      HM5264805TT8Mx8x4Bank16,000
                      HM5264165TT4Mx16x4Bank16,000

                      - SDRAM Modules
                      ProductBit configurationSample price
                      (yen)
                      168-pin
                      unbuffered
                      DIMM
                      HB526C1672EN16Mx72313,200
                      HB526C1664EN16Mx64278,400
                      HB526C864EN8Mx64139,200
                      168-pin
                      buffered
                      DIMM
                      HB526C1672E16Mx72316,800
                      HB526C872E8Mx72158,400
                      144-pin
                      SO DIMM
                      HB526A864DB8Mx64139,200
                      HB526A464DB4Mx6469,600

                      [Specifications]

                      - 64-Mbit SDRAMs
                      ItemHM5264405TTHM5264805TTHM5264165TT
                      Bit configuration16M word x 4 bit8M word x 8 bit4M word x 16bit
                      Voltage3.3V+/-0.3V
                      Interface LVTTL
                      Burst length1 / 2 / 4 / 8 FULL
                      Burst modesSequential/Interleaved
                      Clock frequency83/100 MHz
                      Access time
                      tAC
                      CL=3:8/10ns
                      CL=2:9/13ns
                      Set up/Hold2ns/1ns
                      FunctionsBurst stop
                      Burst read/write
                      Single read/write
                      Auto-precharge
                      Clock suspend
                      DQM control
                      Self-/Auto-refreshing
                      Process0.3 micron CMOS process
                      Package54-pin 400mil TSOP-II

                      - SDRAM Modules

                      (1) 168-pin 8-byte DIMM
                      ItemHB526C1672ENHB526C1664ENHB526C864ENHB526C1672EHB526C872E
                      Bit configuration16M word x 72 bit16M word x 64 bit8M word x 64bit16M word x 72 bit8M word x 72 bit
                      BufferUnbufferedBuffered
                      Power supply3.3V+/-0.3V
                      Burst length1 / 2 / 4 / 8 FULL
                      Burst modesSequential/Interleaved
                      Clock frequency83/100 MHz
                      Access time
                      tAC
                      CL=3:8/10nsCL=3:10/12ns
                      CL=2:9/13nsCL=2:11/15ns
                      Set up/Hold2ns/1ns
                      FunctionsBurst stop
                      Burst read/write
                      Single read/write
                      Auto-precharge
                      Clock suspend
                      DQM control
                      Self-/Auto-refreshing
                      Package size133.35mm x 31.75mm x 2.92mm133.35mm x 44.45mm x 2.92mm

                      (2) 144-pin SO DIMM
                      ItemHB526A864DBHB526A464DB
                      Bit configuration8M word x 64 bit4M word x 64 bit
                      Power supply voltage3.3V+/-0.3V
                      Burst length1 / 2 / 4 / 8 FULL
                      Burst modesSequential/Interleaved
                      Clock frequency83/100 MHz
                      Access time
                      tAC
                      CL=3:8/10ns
                      CL=2:9/13ns
                      Set up/Hold2ns/1ns
                      FunctionsBurst stop
                      Burst read/write
                      Single read/write
                      Auto-precharge
                      Clock suspend
                      DQM control
                      Self-/Auto-refreshing
                      Package size67.6mm x 31.75mm x 3.80mm


                      All Rights Reserved, Copyright (C) 1995, 1996, Hitachi, Ltd.
                      WRITTEN BY Secretary's Office

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