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                      | HITACHI HOME | UP | SEARCH | HITACHI

                      News Release

                      February 1, 1999

                      Hitachi Releases HVC135 Series Antenna Switch PIN Diodes Featuring Forward Resistance and Capacitance among Industry's Lowest level

                      -- For lower power consumption and higher performance of antenna switch circuits in digital cellular phones, etc. --

                      Hitachi, Ltd. (NYSE:HIT) today announced the HVC135 Series of PIN diodes for antenna 
                      switch use in PDC and GSM digital cellular phones, and multimedia tuner*1 source 
                      switching.  Use of Hitachi's proprietary trench process*2 has resulted in forward resistance 
                      and capacitance figures ranking among the industry's lowest level.  Sample shipments of the 
                      first two products in the series-the HVC135 and HVC136-will begin in March 1999 in 
                      Japan.
                      Compared with Hitachi's previous HVC131 product, the HVC135 has an approximately 
                      35% lower forward resistance of 1.3ohm (typ.) in the 2 mA low-current region, and an 
                      approximately 15% lower inter-pin capacitance of 0.47 pF (typ.), for lower power 
                      consumption and higher performance of antenna switch circuits.
                      The rapid advances being made in the areas of size reduction, lower power consumption, 
                      higher frequencies, and multi-band capability in products such as digital cellular phones have 
                      brought a variety of demands relating to the PIN diodes used in antenna switches, including 
                      low-current operation, low transmission/reception power loss, small inter-pin capacitance 
                      and minimal signal leakage, as well as the absence of major variations in impedance even at 
                      high frequencies.
                      The new HVC135 Series is the first Hitachi diode series to employ the trench process, 
                      enabling the trade-off characteristics of forward resistance and capacitance to be reduced 
                      simultaneously.  In the 2 mA low-current region, the forward resistance specification is 1.3
                      ohm (typ.) for the HVC135 and 1.6ohm (typ.) for the HVC136, and the capacitance 
                      specification is 0.47 pF (typ.) for the HVC135 and 0.32 pF (typ.) for the HVC136-figures 
                      that rank among the best in the industry.  These specifications make it possible to improve 
                      transmission/reception isolation characteristics and loss in antenna switch circuits, and to 
                      improve impedance and achieve stability in the high-frequency region.  In addition, use of 
                      Hitachi's super shallow PN junction process*3 offers an extremely small degree of deviation 
                      and ensures uniformity in electrical characteristics.  These products also feature a high 
                      electrostatic discharge protection level of 400 V or more under EIAJ standard conditions 
                      (200 pF, 0 ohm), eliminating the need for special protective circuitry or parts.
                      The package used is a UFP (Hitachi package code) ultra-miniature resin package for surface 
                      mounting.
                      In the future, Hitachi plans to extend the HVC135 Series lineup with the HVC137, featuring 
                      even lower forward resistance and capacitance specifications, for the next generation of 
                      cellular phones.
                      Notes:	1.	Multimedia tuner: A tuner compatible with personal computers, etc., capable 
                                      of broadcast media reception (BS/CS, TV, FM/AM, etc.) 
                      	2.	Trench process: A structure and process in which a trench is formed around a 
                                      junction by means of chemical etching, and prevent the depletion layer for 
                                      expanding laterally that functions as a capacitor is isolated.
                      	3.	Super shallow PN junction process: A diode PN junction process developed by 
                                      Hitachi.  A submicron junction depth is achieved by use of a low temperature and 
                                      impurity density optimization during junction formation.
                      
                      < Typical Applications >
                      - Digital cellular phones
                      - Multimedia tuner source switching
                      
                      <Prices in Japan>
                      Product Code     Sample Price (Yen)
                      HVC13                  15          
                      HVC136                 15          
                      
                      
                      
                      1. Absolute Maximum Ratings (Ta=25 degrees Celsius) HVC135, HVC136
                      Item                   Symbol   Value        Unit  
                      Peak reverse voltage    VRM      65           V    
                      Reverse voltage         VR       60           V    
                      Forward current         IF       100          mA   
                      Power dissipation       Pd       150          mW   
                      Junction temperature    Tj       125          degrees Celsius   
                      Storage temperature     Tstg    -55 to +125   degrees Celsius   
                      
                      2.Electrical Characteristics (Ta=25 degrees Celsius)
                      Item               Symbol       Max          Unit     Test Condition   
                                                  HVC135  HVC136                             
                      Reverse current     IR       0.1     0.1     micronA    VR=60V         
                      Forward voltage     VF       1.0     1.0      V         IF=10mA        
                      Capacitance         C        0.6     0.45     pF        VR=1V,f=1MHz   
                      Forward resistance  rf       1.5     2.0      -         IF=2mA,f=100MHz
                       


                      WRITTEN BY Secretary's Office
                      All Rights Reserved, Copyright (C) 1999, Hitachi, Ltd.

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